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Dr. Soni Prayogi, M.Si
Dosen Program Studi Teknik Elektro
soni.prayogi@universitaspertamina.ac.id


Biografi

Dr. Soni Prayogi, M.Si, currently works in Electrical Engineering, at Pertamina University, Indonesia. He does research in materials science, condensed matter physics, magnetic compounds, and nano-/2D-materials

Pendidikan

  1. Doctor of Philosophy (Dr) Institut Teknologi Sepuluh Nopember
  2. Master of Science (M.Si) Institut Teknologi Sepuluh Nopember

Pengajaran

  1. Fisika Mekanik
  2. Fisika Elektromagnetik
  3. Material Listrik
  4. Rangkaian DC
  5. Devais Elektronika
  6. Rangkaian AC
  7. Energi Baru Terbarukan
  8. Pengenalan Devais Semikonduktor
  9. Fabrikasi dan Karakterisasi Devais Semikonduktor
  10. Sel Surya Fotovoltaik

Profil Peneliti


Peminatan Peneliti


Publikasi Penelitian

  1. Solar Energy Utilization
  2. Multi intrinsic layer a-Si:H solar cells Using PECVD
  3. Band Gap Optimization of Thin Film a-Si:H Bifacial Solar Cells (BFSCs) Using AFORS-HET

Pengabdian Masyarakat

  1. PELATIHAN PERANCANGAN , INSTALANSI DAN MAINTENANCE PEMBANGKIT LISTRIK SEL SURYA”DI PULAU KAMBING, KABUPATEN SAMPANG
  2. PEMANFAATAN DAN PENGELOLAAN LIMBAH PETERNAKAN UNTUK BIOGAS DAN MENINGKATKAN KUALITAS LINGKUNGAN DI PULAU MANDAINGIN MADURA

Pengalaman

  1. The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD
  2. Optical transmission of p-Type a-Si: H thin film deposited by PECVD on ITO-coated glass
  3. The Effects of Dopant Concentration on the Performances of the a-SiOx:H(p)/a-Si:H(i1)/a-Si:H(i2)/µc-Si:H(n) Heterojunction Solar Cell
  4. Analysis of thin layer optical properties of A-Si: H P-Type doping CH4 and P-Type without CH4 is deposited PECVD systems
  5. Effect of active layer thickness on the performance of amorphous hydrogenated silicon solar cells
  6. The influences of the front work function and intrinsic bilayer (i1, i2) on p-i-n based amorphous silicon solar cell’s performances: A numerical study
  7. Fabrication of solar cells based on a-Si: H layer of intrinsic double (Pi x-iy-N) with PECVD and Efficiency analysis

Video

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